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Our Publications

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  • Thomas Aichinger, Gerald Rescher, and Gregor Pobegen. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectronics Reliability, 80:68–78, January 2018. (doi:10.1016/j.microrel.2017.11.020)
  • Judith Berens. Cryogenic characterization of 4H-SiC high power MOSFET. Master's thesis, RWTH Aachen University, Aachen, 2018.
  • Sascha Einspieler, Benjamin Steinwender, and Wilfried Elmenreich. Integrating Time-Triggered and Event-Triggered Traffic in a Hard Real-Time System. In 1st IEEE International Conference on Industrial Cyber-Physical Systems (ICPS), 2018.
  • Tibor Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, Gregor Pobegen, K. Puschkarsky, H. Reisinger, B. O'Sullivan, and B. Kaczer. Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from nbti/pbti stress in nmos/pmos transistors. In International Reliability Physics Symposium, pages 2A.2–1--2A.2–10. IEEE, 2018. (doi:10.1109/IRPS.2018.8353540)
  • Gernot Gruber, Christian Gspan, Evelin Fisslthaler, Martina Dienstleder, Gregor Pobegen, Thomas Aichinger, Robert Meszaros, Werner Grogger, and Peter Hadley. Impact of the no anneal on the microscopic structure and chemical composition of the si‐face 4H‐sic/sio2 interface. Advanced Materials Interfaces, 0(0):1800022, 2018. (doi:10.1002/admi.201800022)
  • Barbara Kaltenbacher and Barbara Pedretscher. Parameter estimation in sdes via the Fokker–planck equation: Likelihood function and adjoint based gradient computation. Journal of Mathematical Analysis and Applications, In Press, 2018. (doi:10.1016/j.jmaa.2018.05.048)
  • Christian Koller, Gregor Pobegen, Clemens Ostermaier, and Dionyz Pogany. Trap-related localized breakdown in carbon-doped GaN. In International Conference on the Physics of Semiconductors (ICPS), 2018.
  • Marco Kraigher. Verification of an HTOL Test by Use of an Advanced Embedded System. Bachelor's thesis, Carinthia University of Applied Sciences, 2018.
  • Gerald Rescher, Gregor Pobegen, Thomas Aichinger, and Tibor Grasser. Preconditioned bti on 4H-SiC: Proposal for a nearly delay time-independent measurement technique. IEEE Transactions on Electron Devices, 65(4):1419–1426, April 2018. (doi:10.1109/TED.2018.2803283)