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Our Publications

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  • Thomas Aichinger, Gerald Rescher, and Gregor Pobegen. Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs. Microelectronics Reliability, 80:68–78, January 2018. (doi:10.1016/j.microrel.2017.11.020)
  • Dženana Alagić, Olivia Bluder, and Jürgen Pilz. Quantification and prediction of damage in sam images of semiconductor devices. In Image Analysis and Recognition, pages 490–496. Springer, June 2018. (doi:10.1007/978-3-319-93000-8_55)
  • Judith Berens. Cryogenic characterization of 4H-SiC high power MOSFET. Master's thesis, RWTH Aachen University, Aachen, 2018.
  • Mirko Bernardoni, Nicola Delmonte, Diego Chiozzi, and Paolo Cova. Non-linear thermal simulation at system level: compact modelling and experimental validation. Microelectronics Reliability, 80:223–229, January 2018. (doi:10.1016/j.microrel.2017.12.005)
  • J. Cottom, Gernot Gruber, Gregor Pobegen, Thomas Aichinger, and A. L. Shluger. Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations. Journal of Applied Physics, 124(4):045302, 2018. (doi:10.1063/1.5024608)
  • Sascha Einspieler, Benjamin Steinwender, and Wilfried Elmenreich. Integrating Time-Triggered and Event-Triggered Traffic in a Hard Real-Time System. In 1st IEEE International Conference on Industrial Cyber-Physical Systems (ICPS), 2018.
  • Bettina Findenig. Design of a power supply for a diagnostic gate driver in a high voltage application stress test. Master's thesis, Carinthia University of Applied Sciences, 2018.
  • Tibor Grasser, B. Stampfer, M. Waltl, G. Rzepa, K. Rupp, F. Schanovsky, Gregor Pobegen, K. Puschkarsky, H. Reisinger, B. O'Sullivan, and B. Kaczer. Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from nbti/pbti stress in nmos/pmos transistors. In International Reliability Physics Symposium, pages 2A.2–1--2A.2–10. IEEE, 2018. (doi:10.1109/IRPS.2018.8353540)
  • Gernot Gruber, Christian Gspan, Evelin Fisslthaler, Martina Dienstleder, Gregor Pobegen, Thomas Aichinger, Robert Meszaros, Werner Grogger, and Peter Hadley. Impact of the no anneal on the microscopic structure and chemical composition of the si‐face 4H‐sic/sio2 interface. Advanced Materials Interfaces, 0(0):1800022, 2018. (doi:10.1002/admi.201800022)
  • Barbara Kaltenbacher and Barbara Pedretscher. Parameter estimation in sdes via the Fokker–planck equation: Likelihood function and adjoint based gradient computation. Journal of Mathematical Analysis and Applications, In Press, 2018. (doi:10.1016/j.jmaa.2018.05.048)
  • Christian Koller, Gregor Pobegen, Clemens Ostermaier, and Dionyz Pogany. Trap-related localized breakdown in carbon-doped GaN. In International Conference on the Physics of Semiconductors (ICPS), 2018.
  • Marco Kraigher. Verification of an HTOL Test by Use of an Advanced Embedded System. Bachelor's thesis, Carinthia University of Applied Sciences, 2018.
  • Elke Ludwig. Accelerated Corrosion Testing of the Copper/Polyimide System in Semiconductor Devices. PhD thesis, Technical University Vienna, 2018.
  • Martin Pleschberger. Runtime optimization for automated pattern analysis. Master's thesis, Alpen-Adria-Universität Klagenfurt, 2018.
  • Clemens Reichel. Fracture mechanical simulation of indentation testing in gallium nitride. Master's thesis, Technical University Vienna, 2018.
  • Gerald Rescher, Gregor Pobegen, Thomas Aichinger, and Tibor Grasser. Preconditioned bti on 4H-SiC: Proposal for a nearly delay time-independent measurement technique. IEEE Transactions on Electron Devices, 65(4):1419–1426, April 2018. (doi:10.1109/TED.2018.2803283)
  • Roland Sleik. System Level Reliability Testing Under Application Stress Conditions. PhD thesis, Graz University of Technology, June 2018.