Publications

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2025

  • Lena Bergmann. Electrical characterization of point defects in silicon high voltage diodes. PhD thesis, FAU Erlangen-Nuremberg, 2025.
  • Nadine Buchebner, Julius F. Keckes, Verena Maier-Kiener, Peter-Julian Imrich, and Daniel Kiener. A comprehensive methodological approach towards the micromechanical characterization of lead-free solder joints. JOM, Open Access, March 2025. (doi:10.1007/s11837-025-07289-z)
  • Charlotte Cui, Fereshteh Falah Chamasemani, Michael Reisinger, Peter Imrich, Walter Hartner, Werner Robl, and Roland Brunner. A generative diffusion-based AI-model to scrutinise the microstructural degradation of isothermally aged Cu-SAC305 interfaces. npj Materials Degradation, 9(1), May 2025. (doi:10.1038/s41529-025-00603-9)
  • Sergei Hammer. Cybersecurity Enhancement for Safety Related Low-End Automotive Electronics. PhD thesis, Alpen-Adria-Universität Klagenfurt, 2025.
  • Jakob Koenig. FAIR data exchange in EU projects – use case All2GaN. In DESY ISM 2025, Hamburg, Germany, January 2025.
  • Thomas Poll. Electrical characterization of p-GaN gate HEMTs: The role of intentional hole injection for dynamic RDS,on recovery. Master’s thesis, TU Wien, 2025.
  • Bernhard Ruch, Rajarshi Roy Chaudhuri, Boris Butej, Joao Gomes, Manuel Stabentheiner, Korbinian Reiser, Christian Koller, Dionyz Pogany, Clemens Ostermaier, and Michael Waltl. Evidence for 2D hole gas in GaN gate injection transistors and its role in Rdson recovery. In 2025 IEEE International Reliability Physics Symposium (IRPS). IEEE, March 2025. (doi:10.1109/irps48204.2025.10983056)
  • Michael Georg Stadt, Silvia Larisegger, Michael Nelhiebel, Florian Fahrnberger, Herbert Hutter, and Günter Fafilek. High-temperature electrochemical studies of metal diffusion through noble metal layers. Journal of the Electrochemical Society, Open Access, April 2025. (doi:10.1149/1945-7111/adce3d)
  • Andreas Warmuth, Kevin Kapaj, and Alexander Ulbing. Novel control methodologies of back-to-back B6 bridges for an application-related stress test setup. EPE 2025, Early Access, April 2025.
  • Dominik Wieland, Boris Butej, Manuel Stabentheiner, Christian Koller, Dionyz Pogany, and Clemens Ostermaier. Analyzing the role of hole injection on the short circuit performance of p-GaN gate power HEMTs. Microelectronics Reliability, 169, June 2025. (doi:10.1016/j.microrel.2025.115722)
  • Tobias Ziegelwanger, Michael Reisinger, Vedad Babic, Kostya Hlushko, Steven Van Petegem, Juraj Todt, Michael Meindlhumer, and Jozef Keckes. 20 kHz X-ray diffraction on Cu thin films explores thermomechanical fatigue at high strain-rates. Materials & Design, 251:113664, March 2025. (doi:10.1016/j.matdes.2025.113664)

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